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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTL160N4F7 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STL160N4F7 |
| Product Type | MOSFETs |
| Product | N-Channel Power MOSFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 120 A |
| Drain-Source On Resistance (RDS(on)) | 2.5 mΩ Max (2.1 mΩ Typ.) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Gate Charge (Qg) | 29 nC |
| Power Dissipation (PD) | 4.8 W |
| Channel Mode | Enhancement |
| Package / Case | PowerFLAT™ 5 × 6-8 |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | DC/DC Converters, Motor Control, Battery Management Systems, Industrial Power Supplies, Synchronous Rectification, High-Efficiency Switching Applications |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 76 mg |
Application
The STL160N4F7 is a 40 V N-channel STripFET™ F7 power MOSFET optimized for high-efficiency power conversion. Its advanced trench-gate technology provides ultra-low on-resistance, reduced gate charge, excellent figure of merit (FoM), high avalanche ruggedness, and improved EMI immunity. The device is well suited for DC/DC converters, motor control, battery management systems, synchronous rectification, industrial power supplies, and other high-current switching applications requiring low conduction losses and high power density.
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