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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTL140N6F7 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STL140N6F7 |
| Product Type | MOSFETs |
| Product | N-Channel Power MOSFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 145 A |
| Drain-Source On Resistance (RDS(on)) | 2.5 mΩ Max (2.4 mΩ Typ.) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Gate Charge (Qg) | 40 nC |
| Power Dissipation (PD) | 100 W |
| Rise Time | 44 ns |
| Fall Time | 24 ns |
| Package / Case | PowerFLAT™ 5 × 6-8 |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | Motor Control, Uninterruptible Power Supplies (UPS), DC/DC Converters, Solar Power Systems, Industrial Switching Applications |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 76 mg |
Application
The STL140N6F7 is an N-channel 60 V STripFET™ F7 power MOSFET featuring an advanced trench-gate structure with ultra-low on-resistance, low gate charge, and excellent switching efficiency. It is designed for high-current power conversion applications including DC/DC converters, motor drives, UPS systems, solar inverters, industrial power supplies, and other high-efficiency switching applications requiring high power density and low conduction losses.
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