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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTL210N4F7 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STL210N4F7 |
| Product Type | MOSFETs |
| Product | N-Channel Power MOSFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 120 A |
| Drain-Source On Resistance (RDS(on)) | 1.6 mΩ Max (1.3 mΩ Typ.) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V |
| Gate Charge (Qg) | 43 nC |
| Power Dissipation (PD) | 150 W |
| Channel Mode | Enhancement |
| Package / Case | PowerFLAT™ 5 × 6-8 |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | DC/DC Converters, Motor Control, Battery Management Systems, Synchronous Rectification, Industrial Power Supplies, High-Efficiency Switching Applications |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 76 mg |
Application
The STL210N4F7 is a 40 V N-channel STripFET™ F7 power MOSFET featuring an advanced trench-gate architecture that delivers ultra-low on-resistance, reduced gate charge, excellent figure of merit (FoM), low Crss/Ciss ratio for improved EMI immunity, and high avalanche ruggedness. It is ideal for high-efficiency DC/DC converters, motor drives, battery management systems, synchronous rectification, industrial power supplies, and other high-current switching applications requiring low conduction losses and high power density.
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