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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTH240N10F7-6 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STH240N10F7-6 |
| Product Type | Power MOSFET |
| Product | N-Channel Power MOSFET |
| Technology | STripFET™ F7 (Si) |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 180 A |
| Drain-Source On Resistance (RDS(on)) | 2.5 mΩ Typ. |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V |
| Gate Charge (Qg) | 160 nC |
| Power Dissipation (PD) | 300 W |
| Turn-On Delay Time | 49 ns |
| Turn-Off Delay Time | 110 ns |
| Rise Time | 139 ns |
| Fall Time | 112 ns |
| Channel Mode | Enhancement |
| Package / Case | H2PAK-6 (TO-263-7) |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | Motor Drives, Synchronous Rectification, DC/DC Converters, Industrial Power Supplies, Battery Management Systems, High-Current Switching |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 1.60 g |
Application
The STH240N10F7-6 is a 100 V N-channel STripFET™ F7 power MOSFET featuring an enhanced trench-gate structure that delivers ultra-low 2.5 mΩ typical on-resistance, reduced gate charge, and lower internal capacitances for high-efficiency switching. The device is 100% avalanche tested and is optimized for high-current applications requiring low conduction and switching losses. It is well suited for synchronous rectification, DC/DC converters, motor drives, battery management systems, industrial power supplies, and other high-performance power conversion applications where high power density and efficiency are essential. :contentReference[oaicite:0]{index=0}
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