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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCTWA35N65G2V-4 SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Series | SCTWA35N65G2V-4 |
| Product Type | SiC MOSFETs |
| Product | Silicon Carbide Power MOSFET |
| Technology | 2nd Generation SiC |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 45 A |
| Drain-Source On Resistance (RDS(on)) | 67 mΩ Max (55 mΩ Typ.) |
| Gate-Source Voltage (VGS) | -10 V / +22 V |
| Gate Threshold Voltage (VGS(th)) | 5 V |
| Gate Charge (Qg) | 73 nC |
| Power Dissipation (PD) | 240 W |
| Rise Time | 9 ns |
| Fall Time | 14 ns |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 35 ns |
| Channel Mode | Enhancement |
| Package / Case | HiP247-4 |
| Mounting Style | Through Hole |
| Operating Temperature Range | -55 °C to +200 °C |
| Applications | Switch Mode Power Supplies (SMPS), DC/DC Converters, Industrial Motor Drives, Renewable Energy Inverters, EV Auxiliary Power Systems |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 600 |
| Subcategory | Transistors |
Application
The SCTWA35N65G2V-4 is a 2nd-generation silicon carbide (SiC) power MOSFET featuring a 650 V blocking voltage, low 55 mΩ typical on-resistance, fast switching performance, low capacitances, and a robust intrinsic body diode. The device incorporates a dedicated source-sense pin to improve switching efficiency and supports junction temperatures up to 200 °C, making it ideal for switch-mode power supplies (SMPS), DC/DC converters, industrial motor drives, renewable energy inverters, and other high-efficiency high-voltage power conversion applications. It is optimized for designs requiring low switching losses, high thermal capability, and improved system efficiency. :contentReference[oaicite:0]{index=0}
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