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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT020W120G3-4AG SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Series | SCT020W120G3-4AG |
| Product Type | SiC MOSFETs |
| Product | Automotive-Grade Silicon Carbide Power MOSFET |
| Technology | 3rd Generation SiC |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 1200 V |
| Continuous Drain Current (ID) | 100 A |
| Drain-Source On Resistance (RDS(on)) | 28 mΩ Max (18.5 mΩ Typ.) |
| Gate-Source Voltage (VGS) | -10 V / +22 V |
| Gate Threshold Voltage (VGS(th)) | 3 V |
| Gate Charge (Qg) | 121 nC |
| Power Dissipation (PD) | 541 W |
| Rise Time | 9 ns |
| Fall Time | 22 ns |
| Turn-On Delay Time | 21 ns |
| Turn-Off Delay Time | 47 ns |
| Package / Case | HiP247-4 |
| Mounting Style | Through Hole |
| Qualification | AEC-Q101 |
| Operating Temperature Range | -55 °C to +200 °C |
| Applications | EV/HEV Traction Inverters, On-Board Chargers (OBC), DC/DC Converters, Fast EV Charging, Renewable Energy Inverters, Industrial Motor Drives |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 600 |
| Subcategory | Transistors |
Application
The SCT020W120G3-4AG is an automotive-grade 3rd-generation silicon carbide (SiC) power MOSFET designed for high-voltage, high-efficiency power conversion. It features ultra-low on-resistance over the full operating temperature range, high-speed switching performance, a robust intrinsic body diode, a source-sense pin for improved switching efficiency, and junction temperature operation up to 200 °C. Qualified to AEC-Q101, it is ideally suited for EV/HEV traction inverters, on-board chargers (OBC), DC/DC converters, fast EV charging systems, renewable energy inverters, industrial motor drives, and other demanding high-voltage power conversion applications. :contentReference[oaicite:0]{index=0}
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