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Mfr. #:SCT040H65G3AG
Mfr.: STMicroelectronics
Description:SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT040H65G3AG SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel / Cut Tape / MouseReel |
| Product Type | SiC MOSFETS |
| Package Quantity | 1000 pcs |
| Subcategory | Transistors |
Application
STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.
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