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Mfr. #:SCT070H120G3AG
Mfr.: STMicroelectronics
Description:SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT070H120G3AG SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Mounting Style | SMD/SMT |
| Package / Case | H2PAK-7 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel / Cut Tape |
| Product Type | SiC MOSFETS |
| Package Quantity | 1000 pcs |
| Subcategory | Transistors |
Application
STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.
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