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Mfr. #:SCT025H120G3AG
Mfr.: STMicroelectronics
Description:SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT025H120G3AG SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Mounting Style | SMD/SMT |
| Package / Case | H2PAK-7 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel / Cut Tape |
| Product Type | SiC MOSFETs |
| Package Quantity | 1000 pcs |
| Subcategory | Transistors |
Application
STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.
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