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SCT025H120G3AG SiC MOSFETs

Mfr. #:SCT025H120G3AG

Mfr.: STMicroelectronics

Description:SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Order(MOQ) :
100 pcs
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Lead Time :
In stock: 1-3 working days / No stock: 4-8 weeks on average

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Product Details

SCT025H120G3AG SiC MOSFETs

Parameter

Manufacturer	STMicroelectronics
Product Category	SiC MOSFETs
Mounting Style	SMD/SMT
Package / Case	H2PAK-7
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Packaging	Reel / Cut Tape
Product Type	SiC MOSFETs
Package Quantity	1000 pcs
Subcategory	Transistors

Application

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

Hot Tags : SCT025H120G3AG SiC MOSFETs SCT025H120G3AG 1200V SiC MOSFET SCT025H120G3AG N-Channel Silicon Carbide MOSFET SCT025H120G3AG

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