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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTP80NF10 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STP80NF10 |
| Product Type | MOSFETs |
| Product | N-Channel Power MOSFET |
| Technology | STripFET™ (Si) |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 80 A |
| Drain-Source On Resistance (RDS(on)) | 15 mΩ Max (12 mΩ Typ.) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V Typ. |
| Gate Charge (Qg) | 135 nC |
| Power Dissipation (PD) | 300 W |
| Forward Transconductance | 50 S |
| Turn-On Delay Time | 26 ns |
| Turn-Off Delay Time | 116 ns |
| Rise Time | 80 ns |
| Fall Time | 60 ns |
| Channel Mode | Enhancement |
| Package / Case | TO-220-3 |
| Mounting Style | Through Hole |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | Primary Switching, Isolated DC/DC Converters, Telecom Power Supplies, Computer Power Supplies, High-Efficiency Power Conversion |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 1.95 g |
Application
The STP80NF10 is a 100 V N-channel STripFET™ power MOSFET designed to minimize input capacitance and gate charge while delivering low on-resistance, excellent switching efficiency, and high avalanche ruggedness. Its optimized figure of merit enables efficient operation in primary switching stages of isolated DC/DC converters, telecom and computer power supplies, offline switch-mode power supplies (SMPS), motor drives, and other high-efficiency power conversion applications requiring low gate-drive power and reliable high-current performance.
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