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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTP21N90K5 MOSFETs
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| RoHS | Details |
| Series | STP21N90K5 |
| Technology | MDmesh™ K5 Super Junction MOSFET |
| Description | N-Channel Power MOSFET |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 900 V |
| Continuous Drain Current (ID) | 18.5 A |
| Drain-Source On Resistance (RDS(on)) | 250 mOhms (Typ.), 299 mOhms (Max.) |
| Gate-Source Voltage (VGS) | -30 V to +30 V |
| Gate Threshold Voltage (VGS(th)) | 3 V (Typ.) |
| Gate Charge (Qg) | 43 nC |
| Power Dissipation (Pd) | 250 W |
| Channel Mode | Enhancement |
| Features | Ultra-Low Gate Charge, Very Low Figure of Merit (FoM), 100% Avalanche Tested, Zener Protected |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -55 C to +150 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Product Type | MOSFETs |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 2 g |
| Lifecycle | Active |
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