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In stock: 1-3 working days / No stock: 4-8 weeks on averagePD57070S-E RF MOSFET Transistors
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | RF MOSFET Transistors |
| RoHS | Details |
| Series | PD57070S-E |
| Description | RF Power LDMOS Transistor |
| Technology | LDMOS (LdmoST) |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 65 V |
| Continuous Drain Current (ID) | 7 A |
| Operating Frequency | Up to 1 GHz |
| Output Power | 70 W @ 945 MHz, 28 V |
| Power Gain | 14.7 dB (Typ.) |
| Drain Efficiency | 50% (Typ.) |
| Power Dissipation (Pd) | 95 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 91 pF (Typ.) |
| Output Capacitance (Coss) | 58 pF (Typ.) |
| Reverse Transfer Capacitance (Crss) | 3.8 pF (Typ.) |
| Mounting Style | SMD/SMT |
| Package / Case | PowerSO-10RF (Formed Lead) |
| Operating Temperature | -65 C to +165 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Product Type | RF MOSFET Transistors |
| Factory Pack Quantity | 400 |
| Subcategory | Transistors |
| Unit Weight | 3 g |
| Lifecycle | Active |
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