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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTN1NF20 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STN1NF20 |
| Product Type | MOSFETs |
| Product | N-Channel Power MOSFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 1 A |
| Drain-Source On Resistance (RDS(on)) | 1.5 Ω Max (1.1 Ω Typ.) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Gate Charge (Qg) | 5.7 nC |
| Power Dissipation (PD) | 2 W |
| Rise Time | 5.6 ns |
| Fall Time | 12.4 ns |
| Channel Mode | Enhancement |
| Package / Case | SOT-223-4 |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 °C to +150 °C |
| Applications | Primary Switching, Isolated DC/DC Converters, Telecom Power Supplies, Computer Power Supplies, Low Gate Charge Switching Applications |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 4000 |
| Subcategory | Transistors |
| Unit Weight | 250 mg |
Application
The STN1NF20 is a 200 V N-channel STripFET™ II power MOSFET optimized for low gate charge and fast switching performance. Its advanced process technology minimizes input capacitance while maintaining excellent avalanche ruggedness and dv/dt capability, making it well suited for primary switching in isolated DC/DC converters, telecom and computer power supplies, flyback converters, and other high-efficiency power conversion applications requiring compact size and low gate-drive power.
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