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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT012W90G3-4AG SiC MOSFETs
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| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Series | SCT012W90G3-4AG |
| Product Type | SiC MOSFETs |
| Product | Automotive-Grade Silicon Carbide Power MOSFET |
| Technology | SiC (3rd Generation) |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 900 V |
| Continuous Drain Current (ID) | 110 A |
| Drain-Source On Resistance (RDS(on)) | 15.8 mΩ Max (12 mΩ Typ.) |
| Gate-Source Voltage (VGS) | -10 V / +22 V |
| Gate Threshold Voltage (VGS(th)) | 3.1 V |
| Gate Charge (Qg) | 138 nC |
| Power Dissipation (PD) | 625 W |
| Rise Time | 43 ns |
| Fall Time | 16 ns |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 41 ns |
| Package / Case | HiP247-4 |
| Mounting Style | Through Hole |
| Qualification | AEC-Q101 |
| Operating Temperature Range | -55 °C to +200 °C |
| Applications | EV/HEV Main Inverters, On-Board Chargers (OBC), DC/DC Converters, High-Voltage Industrial Power Supplies, Renewable Energy Systems |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1 |
| Subcategory | Transistors |
Application
The SCT012W90G3-4AG is an automotive-grade 3rd-generation silicon carbide (SiC) power MOSFET designed for high-voltage, high-efficiency power conversion. It features ultra-low on-resistance across the full temperature range, high-speed switching performance, a robust intrinsic body diode, source-sense pin architecture for improved efficiency, and operation up to a 200 °C junction temperature. The device is ideal for EV/HEV main traction inverters, on-board chargers (OBC), DC/DC converters, renewable energy systems, and other demanding industrial high-voltage switching applications.
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