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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTL24N60M6 MOSFETs
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| RoHS | Details |
| Series | MDmesh™ M6 |
| Description | N-Channel Super Junction Power MOSFET |
| Technology | MDmesh™ M6 |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 15 A |
| Drain-Source On Resistance (RDS(on)) | 175 mOhms (Typ.), 209 mOhms (Max.) |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Threshold Voltage (VGS(th)) | 3.25 V to 4.75 V (Typ. 4 V) |
| Gate Charge (Qg) | 23 nC |
| Input Capacitance (Ciss) | 960 pF |
| Power Dissipation (Pd) | 107 W |
| Rise Time | 32 ns |
| Fall Time | 9 ns |
| Turn-On Delay Time | 17.7 ns |
| Turn-Off Delay Time | 38.3 ns |
| Features | Reduced Switching Losses, Low Gate Input Resistance, 100% Avalanche Tested, Zener Protected |
| Mounting Style | SMD/SMT |
| Package / Case | PowerFLAT™ 8x8 HV |
| Operating Temperature | -55 C to +150 C |
| Packaging | Reel |
| Brand | STMicroelectronics |
| Product Type | MOSFETs |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Lifecycle | Active |
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