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STGD6NC60HDT4 IGBT Transistors

Mfr. #:STGD6NC60HDT4
Mfr.: STMicroelectronics
Description: IGBT Transistors - N-channel 600 V, 7 A very fast IGBT PowerMESH™ IGBT

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100 pcs
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In stock: 1-3 working days / No stock: 4-8 weeks on average

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Product Details

STGD6NC60HDT4 IGBTs

Parameter

Parameter Name	Parameter Value
Manufacturer	STMicroelectronics
Product Category	IGBTs
RoHS	Details
Series	STGD6NC60HDT4
Description	N-channel 600 V Very Fast IGBT
Technology	PowerMESH™ IGBT
Configuration	Single
Collector-Emitter Voltage (VCEO)	600 V
Continuous Collector Current (IC)	15 A
Collector-Emitter Saturation Voltage (VCE(sat))	1.9 V
Maximum Gate-Emitter Voltage (VGE)	-20 V to +20 V
Gate-Emitter Leakage Current	100 nA
Power Dissipation (Pd)	63 W
Mounting Style	SMD/SMT
Package / Case	DPAK-3 (TO-252-3)
Operating Temperature	-55 C to +150 C
Features	Very Fast Switching, Low VCE(sat), Soft Ultrafast Recovery Antiparallel Diode, Optimized for Resonant and Soft-Switching Applications
Packaging	Reel
Packaging	Cut Tape
Packaging	MouseReel
Brand	STMicroelectronics
Product Type	IGBT Transistors
Factory Pack Quantity	2500
Subcategory	IGBTs
Unit Weight	0.012346 oz
Lifecycle	Active

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