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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTD25NF10LA MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STD25NF10LA |
| Product Type | Power MOSFET |
| Product | Logic-Level N-Channel Power MOSFET |
| Technology | STripFET™ II |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 25 A |
| Drain-Source On Resistance (RDS(on)) | 35 mΩ Max (30 mΩ Typ.) |
| Gate-Source Voltage (VGS) | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V Typ. |
| Gate Charge (Qg) | 38 nC |
| Power Dissipation (PD) | 100 W |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 58 ns |
| Rise Time | 40 ns |
| Fall Time | 20 ns |
| Channel Mode | Enhancement |
| Package / Case | DPAK (TO-252-3) |
| Mounting Style | SMD/SMT |
| Qualification | Automotive Grade |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | DC/DC Converters, Telecom Power Supplies, Computer Power Supplies, Automotive Switching, General High-Efficiency Power Switching |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Unit Weight | 330 mg |
Application
The STD25NF10LA is a logic-level N-channel power MOSFET manufactured using STMicroelectronics' STripFET™ II technology, optimized to minimize gate charge and input capacitance for high-efficiency switching applications. It features a 100 V drain-source voltage rating, 30 mΩ typical on-resistance, fast switching performance, excellent dv/dt ruggedness, and is 100% avalanche tested for improved reliability. The device is particularly suitable as the primary switching element in high-efficiency isolated DC/DC converters, telecom and computer power supplies, automotive electronic systems, and other low gate-drive power conversion applications requiring low switching losses and robust performance. :contentReference[oaicite:0]{index=0}
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