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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTB120N4LF6 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Series | STB120N4LF6 |
| Product Type | Power MOSFET |
| Product | Logic-Level N-Channel Power MOSFET |
| Technology | STripFET™ VI DeepGATE™ |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Breakdown Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 80 A |
| Drain-Source On Resistance (RDS(on)) | 3.1 mΩ Typ. |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V Typ. |
| Gate Charge (Qg) | 58 nC |
| Power Dissipation (PD) | 110 W |
| Channel Mode | Enhancement |
| Package / Case | D2PAK (TO-263) |
| Mounting Style | SMD/SMT |
| Qualification | AEC-Q101 |
| Operating Temperature Range | -55 °C to +175 °C |
| Applications | Automotive Power Distribution, Motor Control, DC/DC Converters, Synchronous Rectification, Industrial Power Switching |
| Packaging | Reel, Cut Tape, MouseReel |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Lifecycle | NRND (Not Recommended for New Design) |
Application
The STB120N4LF6 is an automotive-grade logic-level N-channel power MOSFET based on STMicroelectronics' STripFET™ VI DeepGATE™ technology. It features an ultra-low typical on-resistance of 3.1 mΩ, low gate-drive requirements, low switching losses, and high avalanche ruggedness, making it suitable for high-efficiency low-voltage power switching applications. Qualified to AEC-Q101, the device is intended for automotive power distribution, motor control, synchronous rectification, DC/DC converters, battery-powered systems, and industrial power management applications. According to STMicroelectronics, this device is **NRND (Not Recommended for New Design)** and is maintained primarily to support existing production designs. :contentReference[oaicite:0]{index=0}
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