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In stock: 1-3 working days / No stock: 4-8 weeks on averageTIP41C NPN Power Transistor
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Details |
| Series | TIP41C |
| Description | NPN General Purpose Power Transistor |
| Technology | Silicon (Si) |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Continuous Collector Current (IC) | 6 A |
| Peak Collector Current (ICM) | 10 A |
| Base Current (IB) | 3 A |
| DC Current Gain (hFE) | 15 to 75 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 V (Max.) |
| Transition Frequency (fT) | 3 MHz (Typ.) |
| Power Dissipation (Pd) | 65 W |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -65 C to +150 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Product Type | BJT - Bipolar Transistors |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 0.211644 oz |
| Lifecycle | Active |
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