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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTP3N150 MOSFETs
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| RoHS | Details |
| Series | STP3N150 |
| Tradename | PowerMESH |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 1500 V |
| Id - Continuous Drain Current | 2.5 A |
| Rds On - Drain-Source Resistance | 9 Ohms |
| Vgs - Gate-Source Voltage | ±30 V |
| Vgs(th) - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 29.3 nC |
| Pd - Power Dissipation | 140 W |
| Rise Time | 47 ns |
| Fall Time | 61 ns |
| Typical Turn-On Delay Time | 24 ns |
| Typical Turn-Off Delay Time | 45 ns |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -50 C to +150 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Product Type | MOSFETs |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 0.068784 oz |
| Lifecycle | Active |
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