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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTP36N55M5 Power MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Product Type | Power MOSFET |
| Technology | MDmesh™ V / PowerMESH™ |
| MOSFET Type | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | 550 V |
| Continuous Drain Current (ID) | 33 A |
| Drain-Source On Resistance (RDS(on)) | 60 mΩ Typ. / 80 mΩ Max. |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) | 62 nC Typ. |
| Input Capacitance (Ciss) | 2670 pF Typ. |
| Power Dissipation | 190 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Switching Performance | High-Speed Switching, Low Gate Charge |
| Avalanche Capability | 100% Avalanche Tested |
| Application | High Efficiency Switching Applications |
| Series | MDmesh™ V |
| RoHS | Compliant |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 50 |
| Lifecycle | Active |
| Subcategory | MOSFETs |
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