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Mfr. #:STL100N10F7
Mfr.: STMicroelectronics
Description:MOSFETs N-Ch 100V 0.0062 Ohm 19A STripFET VII DG
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTL100N10F7 MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | MOSFETs |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PowerFLAT-5x6-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 19 A |
| Rds On - Drain-Source Resistance | 7.3 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 61 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 5 W |
| Channel Mode | Enhancement |
| Tradename | STripFET |
| Packaging | Reel / Cut Tape / MouseReel |
| Brand | STMicroelectronics |
| Configuration | Single |
| Fall Time | 15 ns |
| Product Type | MOSFETs |
| Rise Time | 40 ns |
| Series | STL100N10F7 |
| Factory Pack Quantity | 3000 pcs |
| Subcategory | Transistors |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 46 ns |
| Typical Turn-On Delay Time | 27 ns |
| Unit Weight | 0.002681 oz |
Application
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.
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