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Mfr. #:STGWA75H65DFB2
Mfr.: STMicroelectronics
Description:IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTGWA75H65DFB2 IGBTs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | IGBTs |
| Package / Case | TO-247-3 |
| Mounting Style | Through Hole |
| Configuration | Single |
| Collector-Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 115 A |
| Pd - Power Dissipation | 375 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Gate-Emitter Leakage Current | 250 nA |
| Product Type | IGBT Transistors |
| Factory Pack Quantity | 600 pcs |
| Subcategory | IGBTs |
| Unit Weight | 0.215171 oz |
Application
STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 75A.
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