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Mfr. #:STGWA25H120DF2
Mfr.: STMicroelectronics
Description: IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTGWA25H120DF2 IGBTs
Parameter
| Parameter Name | Parameter Value |
| Manufacturer | STMicroelectronics |
| Product Category | IGBTs |
| Technology | Si |
| Mounting Style | Through Hole |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 50 A |
| Pd - Power Dissipation | 375 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Series | STGWA25H120DF2 |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Gate-Emitter Leakage Current | 250 nA |
| Product Type | IGBT Transistors |
| Factory Pack Quantity: Factory Pack Quantity | 600 |
| Subcategory | IGBTs |
| Unit Weight | 0.215171 oz |
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