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Mfr. #:STGW60H65DRF
Mfr.: STMicroelectronics
Description:
IGBT Transistors 650V 120A High Speed IGBT
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSTGW60H65DRF IGBT Transistors
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | IGBT Transistors |
| Series | STGW60H65DRF |
| Product | Field Stop Trench Gate IGBT |
| Technology | Si |
| Collector-Emitter Voltage VCEO Max | 650 V |
| Continuous Collector Current (Ic) | 60 A |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Gate-Emitter Voltage | -20 V to +20 V |
| Gate-Emitter Leakage Current | 250 nA |
| Power Dissipation | 360 W |
| Diode Type | Ultrafast Soft Recovery Antiparallel Diode |
| Switching Frequency | High Speed Switching |
| Package / Case | TO-247 |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature | +175 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Product Type | IGBT Transistors |
| Factory Pack Quantity | 600 |
| Subcategory | IGBTs |
Application
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.
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