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Mfr. #:SCT1000N170
Mfr.: STMicroelectronics
Description:
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 packageT
Order(MOQ) :
100 pcsCurrency :
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In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT1000N170 SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Series | SCT1000N170 |
| Technology | SiC |
| Mounting Style | Through Hole |
| Package / Case | HiP-247-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV |
| Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Vgs - Gate-Source Voltage | -10 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 14 nC |
| Pd - Power Dissipation | 120 W |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature | +200 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Product Type | SiC MOSFETs |
| Factory Pack Quantity | 600 |
| Subcategory | Transistors |
Application
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.
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