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Mfr. #:SCT027W65G3-4AG
Mfr.: STMicroelectronics
Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
Order(MOQ) :
100 pcsCurrency :
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Support EXW,DDU(DAP),CPT,DDPLead Time :
In stock: 1-3 working days / No stock: 4-8 weeks on averageSCT027W65G3-4AG SiC MOSFETs
Parameter
| Manufacturer | STMicroelectronics |
| Product Category | SiC MOSFETs |
| Series | SCT027W65G3-4AG |
| Technology | SiC |
| Mounting Style | Through Hole |
| Package / Case | HiP-247-4 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 60 A |
| Rds On - Drain-Source Resistance | 29 mOhms |
| Vgs - Gate-Source Voltage | -18 V to +18 V |
| Vgs th - Gate-Source Threshold Voltage | 4.2 V |
| Qg - Gate Charge | 51 nC |
| Pd - Power Dissipation | 313 W |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 17 ns |
| Typical Turn-Off Delay Time | 31 ns |
| Rise Time | 8 ns |
| Fall Time | 17 ns |
| Qualification | AEC-Q100 |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature | +200 C |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Product Type | SiC MOSFETs |
| Factory Pack Quantity | 600 |
| Subcategory | Transistors |
Application
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.
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